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The B11G3338N80DX is an RF MOSFET transistor manufactured by Ampleon. It operates within a frequency range of 3.3 GHz to 3.8 GHz. The device provides a gain of 38 dB and delivers an output power of 49 dBm. Key electrical specifications include a drain-source breakdown voltage (Vds) of 65 V. The component utilizes LDMOS technology and features a maximum operating temperature of +200°C. It is housed in a 36-pin PQFN package measuring 12x7 mm, designed for surface mount applications.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct configuration. Confirm RoHS compliance status and chemical content declarations directly with the manufacturer or authorized distributors prior to procurement. Ensure storage conditions account for moisture sensitivity levels as specified in the datasheet.
Select this component for applications requiring high efficiency in sub-6 GHz bands without external isolators. The integrated matching networks reduce board space and simplify design complexity. Consider the 65 V breakdown voltage and thermal limits when designing heat dissipation strategies for high-power density environments.
This part belongs to the GEN11 Macro product line introduced by Ampleon. It represents an advancement in compact, fully integrated RF solutions for modern cellular infrastructure. The device leverages advanced LDMOS technology to provide robust performance in demanding wireless communication applications.
The B11G3338N81D is a related variant within the same family. Verify pinout compatibility and specific electrical tolerances before substitution. Consult official cross-reference guides for exact functional equivalence.