B11G3338N80DYZ

Overview

The B11G3338N80DYZ is an RF LDMOS transistor manufactured by Ampleon USA Inc. It operates within the frequency range of 3.3 GHz to 3.8 GHz and utilizes a 36-PQFN (12x7) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 65 V, a maximum operating temperature of +200°C, and a gate-source voltage range from -500 mV to +13 V. The device provides a gain of 38 dB and delivers an output power of 49 dBm.

Feature Summary

• High thermal stability with a maximum junction temperature rating of +200°C
• Optimized for high gain performance in ultra-wideband applications
• Designed for robust operation at elevated temperatures

Applications

• Ultra-wideband (UWB) radio systems
• Military communication equipment
• Electronic warfare systems

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Ensure storage conditions meet specified humidity requirements to prevent damage before soldering.

Selection Notes

Select this component for designs requiring high output power and gain in the 3.3-3.8 GHz band. Consider the 36-PQFN package for compact PCB layouts. Evaluate thermal management solutions to support the high-temperature operation capability.

Part Context

This part belongs to the B11G series of RF MOSFETs from Ampleon. It shares the same core die technology as the B11G3338N81DYZ but may differ in specific packaging suffixes or testing criteria defined by the manufacturer.

Replacement Considerations

The B11G3338N81DYZ is a closely related variant within the same product family. Verify pinout compatibility and exact parameter tolerances before substitution.