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The B11G3338N81DX is an RF LDMOS transistor manufactured by Ampleon. It operates within a frequency range of 3.3 GHz to 3.8 GHz and features a drain-source breakdown voltage (Vds) of 65 V. The device provides a gain of 38 dB and delivers an output power of 49 dBm. It utilizes a 36-PQFN package with dimensions of 12x7 mm, designed for surface mount installation. The maximum operating temperature reaches +200°C, and the gate-source voltage limits are specified as -500 mV and +13 V.
Verify the specific suffix 'DX' against official Ampleon documentation to confirm exact packaging or marking variations compared to the 'DYZ' variant. Ensure compatibility with existing PCB footprints for the 36-PQFN package. Confirm RoHS compliance status through the manufacturer's latest product change notices before finalizing procurement orders.
Select this component when designing circuits requiring high linearity and efficiency in the 3.4 GHz band. The 65 V rating suits standard base station supply voltages. Evaluate thermal management requirements given the +200°C max temperature rating. Ensure the design accommodates the specific gate bias requirements of -500 mV to +13 V for optimal performance.
This part belongs to Ampleon's portfolio of LDMOS transistors optimized for wireless infrastructure. It complements other models in the B11 series, offering a balance of gain and power density. The PQFN-12x7 package allows for compact integration into modern base station modules, supporting the industry trend toward smaller form factors without sacrificing RF performance.
Cross-reference with B11G3338N81DYZ for potential pin-compatible alternatives. Verify electrical parameter equivalence, particularly regarding Vds and output power, before substitution. Consult Ampleon's official replacement guide to ensure no functional differences exist between the DX and DYZ suffixes.