B11G3742N81DYZ

B11G3742N81DYZ

$51.93
  • Description:RF MOSFET LDMOS 550 MV 36QFN
  • Series:-

SKU:44b8eeaef765 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 550 MV 36QFN
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:3.7GHz ~ 4.2GHz
  • Gain:32dB
  • Voltage - Test:550 mV
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:195 mA
  • Power - Output:48.4dBm
  • Voltage - Rated:28 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:36-QFN Exposed Pad
  • Supplier Device Package:36-PQFN (12x7)
  • Configuration:Dual

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B11G3742N81DYZ

Overview

The B11G3742N81DYZ is a dual-section, fully integrated Doherty MMIC utilizing LDMOS technology. It operates within the 3700 MHz to 4200 MHz frequency range and is designed for general-purpose driver applications. The device integrates carrier and peaking devices, input splitters, output combiners, and pre-matches within each section. Key electrical parameters include a power gain of 32 dB, an output power at 3 dB compression (PL(3dB)) of 48.5 dBm, and a drain efficiency of 20% at 5 W output. It features independent control of carrier and peaking bias voltages and includes integrated ESD protection and a bias gate switch.

Feature Summary

  • Fully integrated Doherty architecture with carrier and peaking sections
  • Integrated input splitter and output combiner for simplified design
  • Independent bias control for carrier and peaking devices
  • Integrated ESD protection and bias gate switch functionality

Applications

  • Macrocell base station driver
  • Microcell base station
  • 5G mMIMO systems
  • W-CDMA/LTE infrastructure
  • Active antenna arrays

Procurement Notes

Verify the specific ordering suffix 'YZ' against official Ampleon documentation to confirm packing details, as packaging variations exist within the product family. Ensure compatibility with RoHS3 standards and check the latest datasheet revision for any updates to thermal or electrical specifications before finalizing procurement orders.

Selection Notes

Select this component for broadband RF driver applications requiring high linearity and large instantaneous bandwidth. Verify that the application circuit can support the required VDS of 28 V and the separate biasing requirements for carrier and peaking gates. Ensure PCB layout adheres to the recommended Rogers 4350 substrate specifications for optimal impedance matching and thermal performance.

Part Context

This part belongs to the B11G3742 series of LDMOS 3-stage integrated Doherty MMICs from Ampleon. It is specifically packaged in a PQFN-12x7-36-1 outline. The 'N81D' designation indicates the specific integration level and pinout configuration for this multiband solution, distinguishing it from other variants in the broader B11G3742 family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Ampleon directly for qualified alternatives or cross-reference options based on specific Doherty MMIC requirements.

B11G3742N81DYZB11G3742N81DYZ
$51.93
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