SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BA782-E3-08 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors in an SOD-123 surface-mount package. It is designed for electric bandswitching applications in radio and TV tuners operating within the 50 MHz to 1000 MHz frequency range. The device features a maximum reverse voltage of 35 V and a continuous forward current rating of 100 mA, with a junction temperature limit of 125 °C. Electrical characteristics include a typical dynamic forward resistance of 0.7 Ω at 3 mA and a diode capacitance of 1.25 pF at 3 V reverse bias.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and AEC-Q101 qualification requirements against specific project needs. Ensure storage conditions remain within specified limits to maintain material integrity prior to assembly.
Select this component when low capacitance and stable dynamic resistance are required for high-frequency switching. Compare BA782 against BA783 variants based on specific impedance requirements, as the BA783 exhibits higher dynamic resistance values. Verify that the SOD-123 footprint aligns with existing PCB layout constraints.
This part belongs to the BA78x series of band switching diodes from Vishay Semiconductors. The suffix -E3-08 indicates RoHS-compliant commercial grade packaging in tape and reel format containing 3,000 units per 7-inch reel. It shares mechanical similarities with the BA783 variant but differs in electrical performance parameters.
BA783-E3-08 serves as a functional alternative within the same series, though it exhibits different dynamic forward resistance and capacitance values. Cross-referencing specific impedance curves is necessary before substitution.