BA782S-E3-08

RF Diode Overview

The BA782S-E3-08 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors in an SOD-323 case. Designed for electric bandswitching in radio and TV tuners within the 50 to 1000 MHz frequency range, it features constant dynamic forward resistance over wide current ranges and low reverse capacitance independent of voltage. Key electrical parameters include a maximum reverse voltage of 35 V, a continuous forward current of 100 mA, and a junction temperature limit of 125 °C. At 100 mA forward current, the forward voltage is typically 1000 mV, while reverse current at 20 V is limited to 50 nA.

RF Diode Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• RoHS-compliant commercial grade construction
• Low series inductance suitable for high-frequency applications

RF Diode Applications

• Electric bandswitching in radio tuners
• Bandswitching in television tuners
• High-frequency signal routing (50 to 1000 MHz)

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and AEC-Q101 qualification requirements against specific project specifications. Ensure ordering suffixes match required packaging options, such as tape and reel configurations, before finalizing procurement orders.

RF Diode Selection Notes

Select this component when designing circuits requiring low parasitic capacitance and stable dynamic resistance across varying forward currents. The SOD-323 package offers compact surface-mount integration. Evaluate thermal management needs against the 125 °C junction temperature limit and ensure operating conditions remain within the specified 35 V reverse voltage and 100 mA forward current boundaries.

RF Diode Part Context

This device belongs to the BA782S/BA783S family of band switching diodes. While sharing similar mechanical dimensions and general functionality, the BA782S differs from the BA783S in specific electrical characteristics, particularly regarding dynamic forward resistance values at defined frequencies and currents. Both variants utilize identical SOD-323 packaging and are intended for comparable high-frequency switching roles.

RF Diode Replacement Considerations

Direct substitutes include the BA783S-E3-08, which shares the same package but exhibits different dynamic forward resistance values. Verify that alternative components meet the 35 V reverse voltage rating and 100 mA forward current limits to maintain circuit integrity without modification.