BA783S-G3-08

Overview

The BA783S-G3-08 is a single RF PIN diode manufactured by Vishay General Semiconductor. It features a maximum peak reverse voltage of 35 V and a maximum forward current of 100 mA. The device is housed in an SOD-323 (SC-76) surface-mount package. Key electrical parameters include a capacitance of 1.2 pF at 3 V reverse bias and 1 MHz frequency, and a resistance of 1.2 ohms at 3 mA forward current and 1 GHz frequency. The junction operating temperature range extends up to 125°C.

Feature Summary

• Designed for high-frequency RF applications including mixer circuits
• Utilizes silicon planar technology for reliable performance
• Offers low parasitic capacitance suitable for ultra-high frequency signals

Applications

• RF mixer circuits
• High-frequency signal switching
• Attenuator applications

Procurement Notes

Verify the specific suffix G3-08 against official Vishay documentation to confirm RoHS compliance and packaging details. Ensure the ordering part number matches the required SOD-323 package configuration. Cross-reference datasheet revisions to confirm active status and parameter consistency before finalizing procurement specifications.

Selection Notes

Select this component when a single-pin RF diode with 35 V reverse rating and 100 mA forward capability is required. The SOD-323 package suits space-constrained designs. Verify that the 1.2 pF capacitance at 3 V meets the circuit's impedance matching requirements for the target frequency band.

Part Context

This part belongs to the BA783 series of RF PIN diodes from Vishay. It serves as a standard silicon solution for high-frequency signal processing. The device complements other variants like the BA783-E3-08, differing primarily in packaging and specific suffix designations while maintaining similar core RF characteristics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source data.