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BAR5003WE6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 50V 250MW SOD323-2. Review the specifications below when checking this part for your BOM.
The BAR5003WE6327HTSA1 is a single PIN diode manufactured by Infineon Technologies, designed for radio frequency applications. It features a peak reverse voltage of 50 volts and supports a maximum forward current of 100 mA with a power dissipation rating of 250 mW. The device exhibits a typical capacitance of 0.4 pF at zero bias and operates within a junction temperature range up to 150°C. Packaged in the PG-SOD323-3D surface-mount format, it integrates compact design suitable for high-frequency signal processing tasks.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm package marking matches PG-SOD323-3D specifications. Check datasheet revisions for any parameter updates. Ensure storage conditions comply with moisture sensitivity level requirements. Validate supply chain documentation against current manufacturing status.
Select this component when a low-capacitance PIN diode is required for RF paths. Consider the 50V reverse voltage limit for circuit protection needs. Evaluate the SOD-323 footprint compatibility during PCB layout. Compare power dissipation ratings against thermal management capabilities in the final assembly.
This part belongs to the BAR series of RF PIN diodes from Infineon Technologies. It complements other devices like the BAT1505WE6327HTSA1 Schottky diode but serves distinct switching roles. The SOD-323 package aligns with industry standards for compact RF components. It differs from general-purpose diodes by optimizing speed and capacitance for microwave frequencies.
Public confirmed substitute part numbers are not available in the provided documentation.
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