BB503CCS-TL-H

BB503CCS-TL-H

$0.15
  • Description:RF MOSFET
  • Series:*

SKU:ef2968c413e1 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET
  • Series:*
  • Mfr:Renesas Electronics Corporation
  • Package:Bulk
  • Technology:-
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Configuration:-

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BB503CCS-TL-H

Overview

The BB503CCS-TL-H is a UHF/VHF RF amplifier IC manufactured by Renesas Electronics Corporation, originally developed under the Hitachi Semiconductor brand. It integrates a built-in biasing circuit and an ESD absorbing diode to reduce component count and enhance reliability. The device features low noise performance with a typical noise figure of 1.8 dB at 900 MHz and high gain of 22 dB at the same frequency. It withstands up to 200V ESD stress under specific conditions. The component is housed in a CMPAK-4 (SOT-343mod) mini mold package.

Feature Summary

  • Integrated biasing circuit reduces external parts and PCB space
  • Built-in ESD absorbing diode for enhanced robustness
  • Low noise figure optimized for UHF/VHF applications
  • High gain performance at 900 MHz

Applications

  • UHF/VHF RF amplification systems
  • Wireless communication devices requiring low noise front ends
  • Portable electronic equipment with space constraints

Procurement Notes

Verify the exact manufacturer lineage as this part originated from Hitachi Semiconductor before integration into Renesas. Confirm availability status as older RF components may have limited stock or be subject to obsolescence notices. Ensure compatibility with existing PCB footprints designated for SOT-343mod packages during sourcing.

Selection Notes

Select this component for applications requiring compact UHF/VHF amplification with integrated biasing. Consider the 1.8 dB noise figure for sensitive receiver chains. Verify that the 22 dB gain meets system requirements without excessive external attenuation. Ensure ESD protection levels align with assembly handling standards.

Part Context

This component belongs to the family of MOS FET IC RF amplifiers initially produced by Hitachi Semiconductor. It represents a transition period product where Hitachi's RF portfolio was absorbed into Renesas Technology Corp. Similar variants include BB503C and BB503M, sharing core RF characteristics but potentially differing in packaging or testing specifications.

Replacement Considerations

Direct replacements are not explicitly listed in public documentation. Evaluate BB503C or BB503M for functional equivalence. Verify pinout compatibility and electrical parameters against current design requirements before substitution.

BB503CCS-TL-HBB503CCS-TL-H
$0.15
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