Single Bipolar Transistors BC183LC_J35Z product image

BC183LC_J35Z

$0.03
  • Description:TRANS NPN 30V 0.1A TO-92-3
  • Series:-

SKU:98daf0a9b624 Category: Brand:

  
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BC183LC_J35Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 30V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC183LC_J35Z

  • Description:TRANS NPN 30V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 10µA, 5V
  • Power - Max:350 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC183LC_J35Z

BC183LC_J35Z

Single Bipolar Transistors Overview

The BC183LC_J35Z is an NPN bipolar junction transistor manufactured by onsemi, housed in a TO-92-3 through-hole package. It features a collector-emitter breakdown voltage of 30 V and a collector-base voltage of 45 V. The device supports a continuous collector current of 100 mA and operates with a maximum power dissipation of 350 mW. It has a transition frequency of 150 MHz and functions within a temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

  • NPN silicon bipolar junction transistor structure
  • High-speed switching capability with 150 MHz transition frequency
  • Robust thermal performance with 350 mW power dissipation rating

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Switching applications in low-power electronic systems
  • Audio pre-amplifier stages requiring moderate gain

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against official onsemi documentation to confirm packaging and tape specifications. Ensure compatibility with existing PCB footprints for TO-92-3 packages. Confirm that the 30V VCEO rating meets circuit requirements. Check for RoHS compliance status as indicated in current datasheets. Validate supplier authenticity through authorized distribution channels.

Single Bipolar Transistors Selection Notes

Select this component when an NPN transistor with 30V collector-emitter voltage and 100mA current capacity is required. The TO-92-3 package suits through-hole assembly processes. Consider the 150MHz transition frequency for high-speed switching needs. Evaluate thermal constraints given the 350mW dissipation limit in enclosed environments.

Single Bipolar Transistors Part Context

This part belongs to onsemi's discrete transistor portfolio, specifically the BC183 series. It serves as a standard NPN switching and amplification device. The J35Z suffix typically denotes specific bulk or tape-and-reel packaging configurations defined by the manufacturer. It complements other variants like BC183L and BC183C within the same family.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include BC183L_J35Z and BC183C_J35Z from onsemi, which share identical electrical characteristics but may differ in gain grouping or packaging details. Verify pinout compatibility and thermal resistance values before substitution.

BC183LC_J35ZBC183LC_J35Z
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