BC184B TRE TIN/LEAD

$0.26

Description：30V 200MA 300MW TH TRANSISTOR-SM
Series：-

SKU:df8c364e681a Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

BC184B TRE TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 30V 200MA 300MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC184B TRE TIN/LEAD

Description：30V 200MA 300MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：200 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 2mA, 5V
Power - Max：300 mW
Frequency - Transition：280MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for BC184B TRE TIN/LEAD

BC184B TRE TIN/LEAD

Single Bipolar Transistors Overview

The BC184B TRE TIN/LEAD is an NPN silicon bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 45 V, and an emitter-base voltage (VEBO) of 6.0 V. The device supports a continuous collector current of 200 mA with a power dissipation rating of 300 mW. DC current gain ranges from a minimum of 100 at 10 uA/5 V to a maximum of 500 at 2 mA/5 V. The transition frequency is 280 MHz, and the collector-emitter saturation voltage is 250 mV.

Single Bipolar Transistors Feature Summary

NPN silicon construction for general-purpose amplification and switching applications
Through-hole mounting in a TO-92-3 axial leaded package
High DC current gain capability up to 500 under specified test conditions

Single Bipolar Transistors Applications

General-purpose amplifier circuits
Electronic switching applications
Small-signal processing stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'TRE TIN/LEAD' against official datasheets to confirm tin/lead plating compliance, as standard RoHS versions may differ. Confirm the manufacturer is Central Semiconductor Corp. Ensure the package matches the TO-92-3 form factor. Check for any recent product change notifications or end-of-life declarations directly from the manufacturer before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a through-hole NPN transistor with moderate voltage ratings and high current gain is required. The TO-92-3 package suits manual assembly or legacy board designs. Verify that the 300 mW power dissipation and 200 mA current limits align with the circuit requirements. Consider thermal management if operating near maximum ratings.

Single Bipolar Transistors Part Context

This part belongs to the BC184 series of small-signal NPN transistors produced by Central Semiconductor. The series is designed for low-power applications requiring reliable switching and amplification. The BC184B variant specifically denotes a binning category for higher current gain compared to lower letter designations within the same family.