BC32725_J35Z

Single Bipolar Transistors Overview

The BC32725_J35Z is a PNP general-purpose bipolar junction transistor manufactured by onsemi. It is housed in a TO-92-3 through-hole package and rated for a maximum collector current of 800 mA with a collector-emitter breakdown voltage of 45 V. The device features a transition frequency of 100 MHz, a maximum power dissipation of 625 mW, and a minimum DC current gain of 160 at 100 mA. It supports a maximum junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

• PNP general-purpose switching capability
• High DC current gain for signal amplification
• Through-hole mounting compatibility

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Amplifier stages
• Driver applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix J35Z against official manufacturer documentation to confirm tape-and-reel packaging or binning specifications. Confirm RoHS compliance status directly with onsemi as datasheets may vary by production era. Ensure the component matches the exact electrical parameters required for the target circuit design before procurement.

Single Bipolar Transistors Selection Notes

Select this component for low-power PNP switching tasks requiring moderate current handling. Verify that the TO-92-3 package thermal characteristics meet the system's heat dissipation requirements. Compare the 45 V rating against the maximum operating voltage to ensure adequate safety margins.

Single Bipolar Transistors Part Context

This part belongs to the BC327 series of PNP transistors designed for general-purpose use. It serves as a complement to NPN variants within the same family, offering matched performance characteristics for complementary push-pull configurations in audio and logic circuits.

Single Bipolar Transistors Replacement Considerations

• BC32725BU