Single Bipolar Transistors BC337 TIN/LEAD product image

BC337 TIN/LEAD

$0.14
  • Description:45V 800MA 625MW TH TRANSISTOR-SM
  • Series:BC337

SKU:b4c348e36a6f Category: Brand:

  
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BC337 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 45V 800MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC337 TIN/LEAD

  • Description:45V 800MA 625MW TH TRANSISTOR-SM
  • Series:BC337
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
  • Power - Max:625 mW
  • Frequency - Transition:210MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for BC337 TIN/LEAD

BC337 TIN/LEAD

Single Bipolar Transistors Overview

The BC337 TIN/LEAD is an NPN silicon epitaxial planar transistor designed for switching and audio frequency amplifier applications. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 800 mA. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 625 mW of power. It utilizes a TO-92 three-lead package with tin/lead plating, offering high DC current gain suitable for driver stages and low-power output circuits.

Single Bipolar Transistors Feature Summary

  • NPN silicon epitaxial construction optimized for general-purpose switching and amplification tasks
  • High DC current gain capability supporting efficient signal driving in audio and logic circuits
  • Robust thermal performance allowing operation at junction temperatures up to 150°C
  • Tin/lead terminal finish ensuring compatibility with traditional soldering processes

Single Bipolar Transistors Applications

  • Audio frequency amplifier driver stages
  • General-purpose electronic switching circuits
  • Low-power output stage implementations
  • Complementary pairing with PNP transistors such as the BC327

Single Bipolar Transistors Procurement Notes

Verify the specific manufacturer datasheet for the Central Semiconductor Corp variant, as electrical parameters like hFE ranges may differ from generic BC337 specifications. Confirm that the tin/lead termination meets project requirements regarding material composition and solderability standards before finalizing component selection.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN small-signal transistor with moderate current handling is required. Ensure the application voltage remains below the 45 V collector-emitter limit. Consider the TO-92 package constraints for thermal management if operating near maximum power dissipation limits in enclosed environments.

Single Bipolar Transistors Part Context

This part belongs to the widely used BC337 family of NPN transistors, originally established by manufacturers like Motorola and Fairchild. The BC337 serves as a fundamental discrete semiconductor component in analog and digital electronics. Variants often differ only in gain binning or packaging suffixes, maintaining core electrical characteristics across different production sources.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the BC337-16, BC337-25, and BC337-40, which share identical pinouts and maximum ratings but offer different DC current gain groupings. Other equivalents such as the 2N2222 or 2N3904 may fit mechanically but require verification of current and voltage margins.

BC337 TIN/LEADBC337 TIN/LEAD
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