BC337ZL1

Single Bipolar Transistors Overview

The BC337ZL1 is an NPN silicon epitaxial transistor in a TO-92 package. It features a collector-emitter voltage of 45 V, continuous collector current of 800 mA, and power dissipation of 625 mW at 25°C ambient temperature. The device offers a DC current gain (hFE) range of 100 to 630 at IC = 100 mA and VCE = 1 V. Operating junction temperature spans -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• NPN silicon epitaxial construction for amplifier applications
• High DC current gain suitable for general-purpose amplification
• Lead-free packaging available

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Low-power output stages
• Audio driver stages

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact shipping configuration. Confirm that the component meets all required environmental compliance standards for the intended application before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component based on its 45 V collector-emitter voltage rating and 800 mA continuous current capability. Ensure the thermal management design accommodates the specified power dissipation limits within the operating temperature range to maintain reliability.

Single Bipolar Transistors Part Context

This part belongs to the BC337 family of NPN silicon transistors manufactured by onsemi. It shares core electrical characteristics with other variants in the series but differs in packaging and shipping format specifications as defined in the manufacturer's ordering information.

Single Bipolar Transistors Replacement Considerations

BC337ZL1G serves as the lead-free equivalent variant within the same product family.