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BC33840BU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 25V 0.8A TO-92-3. Review the specifications below when checking this part for your BOM.
The BC33840BU is an NPN silicon bipolar junction transistor (BJT) manufactured by onsemi. It features a maximum collector-emitter voltage of 50 V and a continuous collector current of 1 A. The device operates in a TO-92-3 through-hole package with a power dissipation rating of 625 mW. Key electrical characteristics include a collector-base voltage of 60 V, an emitter-base voltage of 5 V, and a transition frequency of 100 MHz. The DC current gain ranges from 100 to 250.
Verify the specific suffix against official manufacturer documentation to confirm exact binning and electrical tolerances. Ensure the component matches the required voltage and current ratings for the target circuit design. Cross-reference datasheet revisions to confirm pinout consistency and material compliance status before integration into production.
Select this component when an NPN transistor with 1 A current capacity and 50 V breakdown voltage is required. Compare against alternative series members based on specific hFE binning requirements. Consider thermal management needs given the 625 mW power dissipation limit in the TO-92 package for high-duty cycle operations.
This part belongs to the BC338 family of small-signal NPN transistors. It shares similar physical packaging and basic operational principles with other variants in the series, differentiated primarily by their specific gain groupings and voltage ratings. The BC338 series is widely recognized for general-purpose electronic applications.
BC338-40
The maximum continuous collector current is 1 A.
No, it utilizes a TO-92-3 package designed for through-hole mounting.
The transition frequency is specified as 100 MHz.
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