BC556BTFR

Single Bipolar Transistors Overview

The onsemi BC556BTFR is a PNP epitaxial silicon transistor housed in a TO-92-3 (TO-226AA) through-hole package. It features a maximum collector current of -100 mA and a collector-emitter breakdown voltage of -65 V. The device has a collector-base voltage rating of -80 V and an emitter-base voltage limit of -5 V. Key electrical parameters include a transition frequency of 150 MHz, a maximum power dissipation of 500 mW, and a minimum DC current gain (hFE) of 200 at 2 mA and 5 V. Operating temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• PNP polarity configuration for signal amplification
• Epitaxial silicon construction for reliability
• Through-hole mounting compatibility

Single Bipolar Transistors Applications

• General-purpose switching circuits
• Small-signal amplification stages
• Driver applications for low-power loads

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'BTF' against official datasheets to confirm lead form and reel specifications. Confirm RoHS compliance status as it may vary by production batch. Check for obsolescence notices or lifecycle changes directly from onsemi documentation before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 65V collector-emitter rating and 100mA continuous current capacity is required. Ensure the application operates within the specified thermal limits and that the TO-92 package fits the mechanical constraints. Verify hFE requirements align with the minimum gain specification provided in the datasheet.

Single Bipolar Transistors Part Context

This part belongs to the BC556 series of small-signal PNP transistors manufactured by onsemi. It is designed for general-purpose use in consumer electronics and industrial equipment. The BTFR suffix typically indicates tape and reel packaging for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

• BC556BTA
• BC556BTF

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage (VCEO) is -65 V.

Is this transistor suitable for high-frequency applications?

It has a transition frequency (fT) of 150 MHz, making it suitable for moderate-frequency signal processing but not for RF applications requiring higher frequencies.

What is the minimum DC current gain?

The minimum DC current gain (hFE) is 200, measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.