Single Bipolar Transistors BC559BTAR product image

BC559BTAR

$0.03
  • Description:TRANS PNP 30V 0.1A TO-92-3
  • Series:-

SKU:7a24f15f36fd Category: Brand:

  
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BC559BTAR is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 30V 0.1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BC559BTAR

  • Description:TRANS PNP 30V 0.1A TO-92-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Box (TB)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:500 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3

Single Bipolar Transistors datasheet and documents for BC559BTAR

BC559BTAR

Single Bipolar Transistors Overview

The BC559BTAR is a PNP silicon epitaxial planar transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It operates with a maximum collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 30 V. The device exhibits a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, ensuring reliable signal control. Key electrical limits include a collector-base voltage of 40 V and an emitter-base voltage of 5 V. Power dissipation is rated at 500 mW, with a transition frequency (fT) of 150 MHz. The component supports a maximum junction temperature of +150°C and is housed in a TO-92-3 through-hole package.

Single Bipolar Transistors Feature Summary

  • Utilizes epitaxial planar silicon technology for robust performance in low-power circuits.
  • Provides high DC current gain to facilitate efficient signal amplification and switching.
  • Engineered for general-purpose applications requiring stable operation across standard temperature ranges.

Single Bipolar Transistors Applications

  • General-purpose signal amplification
  • Low-power switching circuits
  • Driver stages for logic interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging type and compliance status. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the part number with the latest datasheet revisions to validate technical specifications before integration into design projects.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with a 30 V collector-emitter rating and 100 mA continuous current capacity is required. The specified hFE range suits applications needing consistent gain without excessive base drive current. Consider the TO-92 package constraints for thermal management and board space availability during circuit layout planning.

Single Bipolar Transistors Part Context

This component belongs to the BC55x series of PNP transistors produced by onsemi. It shares functional similarities with other members of the family but is distinguished by its specific voltage ratings and gain characteristics. The series is widely recognized for reliability in consumer electronics and industrial control systems where small-signal processing is essential.

Single Bipolar Transistors Replacement Considerations

Compatible substitutes include the BC558BTA and BC557BTA, provided their respective voltage ratings align with the circuit requirements. Verify that alternative parts maintain equivalent current gain and power dissipation capabilities to ensure seamless functional replacement without redesigning the surrounding bias network.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the BC559BTAR?

The maximum collector-emitter voltage (VCEO) is 30 V.

Does the BC559BTAR support surface mount installation?

No, it is designed for through-hole mounting in a TO-92-3 package.

What is the minimum DC current gain specified for this transistor?

The minimum DC current gain (hFE) is 200, measured at 2 mA collector current and 5 V collector-emitter voltage.

BC559BTARBC559BTAR
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