BC638ZL1

Single Bipolar Transistors Overview

The BC638ZL1 is a PNP silicon transistor in a TO-92 package. It supports a continuous collector current of -0.5 A and a collector-emitter voltage of -60 Vdc. The device features a DC current gain (hFE) ranging from 40 to 160 at -500 mA. Thermal resistance is 200 °C/W junction-to-ambient. Operating temperature spans -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• PNP silicon construction for general-purpose switching and amplification
• High current capability with 0.5 A continuous collector current rating
• Wide operating temperature range suitable for demanding environments

Single Bipolar Transistors Applications

• General-purpose amplifier circuits
• Switching applications requiring moderate current handling
• Driver stages for power transistors or relays

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix ZL1 against official documentation to confirm packaging details, as standard suffixes may indicate different shipping quantities or reel configurations. Ensure compatibility with RoHS directives if required by the final assembly specifications.

Single Bipolar Transistors Selection Notes

Select this component when a PNP configuration with 0.5 A current capacity and -60 V breakdown is required. Consider thermal derating factors for high ambient temperatures. Verify that the hFE range meets the specific bias requirements of the target circuit design.

Single Bipolar Transistors Part Context

This part belongs to the BC638 series of high-current PNP transistors manufactured by onsemi. It shares the same electrical characteristics as the standard BC638 but utilizes specific packaging or shipping configurations indicated by the ZL1 suffix within the manufacturer's product lineup.

Single Bipolar Transistors Replacement Considerations

BC638G

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

-60 Vdc

What is the DC current gain range?

40 to 160 at IC = -500 mA