BC639ZL1G

BC639ZL1G

  • Description:TRANS NPN 80V 1A TO92
  • Series:-

SKU:421f775a9b18 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 80V 1A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Cut Tape (CT),Tape & Box (TB)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
  • Power - Max:625 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)

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BC639ZL1G

Overview

The BC639ZL1G is a silicon NPN bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It features a maximum collector current of 1 A and a collector-emitter voltage rating of 80 V. The device operates within a temperature range of -55°C to +150°C and dissipates up to 625 mW of power. Packaged in a TO-92-3 through-hole configuration, it offers a transition frequency of 200 MHz and a minimum DC current gain (hFE) of 25.

Feature Summary

  • High current capability with a 1 A continuous collector current rating suitable for moderate load driving.
  • Wide operating temperature range extending to +150°C, supporting robust thermal performance in demanding environments.
  • Standardized TO-92 through-hole package facilitates easy integration into legacy and modern printed circuit board designs.

Applications

  • General-purpose signal amplification
  • Low-power switching circuits
  • Driver stages for relays or LEDs

Procurement Notes

Verify component authenticity through authorized channels due to the prevalence of counterfeit semiconductor devices. Confirm that the specific suffix matches the required electrical characteristics and packaging format. Ensure compliance with RoHS directives if environmental regulations apply to the final assembly. Cross-reference datasheet revisions to confirm parameter consistency before design finalization.

Selection Notes

Select this component when an NPN transistor with 80 V breakdown and 1 A current capacity is required in a TO-92 package. Consider the 625 mW power dissipation limit and thermal resistance constraints during PCB layout. Evaluate the hFE range and transition frequency against the specific application bandwidth requirements to ensure adequate performance margins.

Part Context

This part belongs to the BC639 series of high-current NPN transistors from onsemi. It shares architectural similarities with the BC637 and BC639-16 variants, differing primarily in voltage ratings and specific binning configurations. The series is widely utilized in consumer electronics and industrial control systems requiring reliable discrete switching elements.

Replacement Considerations

Direct substitutes include BC639RL1G and BC639ZL1G equivalents from other manufacturers with matching TO-92 pinouts and electrical specifications. Verify that replacement parts meet the same 80 V VCEO and 1 A IC requirements to maintain circuit integrity without redesign.

BC639ZL1GBC639ZL1G

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