SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
BC640,126 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is TRANS PNP 80V 1A TO-92-3. Review the specifications below when checking this part for your BOM.
The BC640,126 is a PNP medium power transistor manufactured by NXP USA Inc. It operates within a TO-92 (SOT54) plastic package and serves as the complementary counterpart to the BC635, BC637, and BC639 NPN transistors. The device supports a maximum collector current of 1 A and handles a collector-emitter voltage of up to 80 V. Its thermal resistance from junction to ambient is rated at 150 K/W, with a total power dissipation capability of 0.83 W under standard conditions.
Verify the component datasheet status before initiating designs. Confirm that the product specifications align with the most recent documentation issued by the manufacturer. Ensure compliance with absolute maximum rating systems to prevent permanent damage during operation or testing phases.
Select this component when designing circuits requiring high current capabilities in a compact through-hole package. Consider its complementary relationship with other transistors in the series for balanced push-pull configurations. Evaluate thermal management requirements based on the specified junction-to-ambient resistance values.
This part belongs to a family of PNP medium power transistors designed for general-purpose applications. It shares physical dimensions and pinout configurations with related models like the BC636 and BC638, differing primarily in voltage ratings. The TO-92 package facilitates easy integration into standard printed-circuit board layouts.
Direct substitutes include the BC636 and BC638, which share identical packaging and pinning but offer different voltage ratings. Verify specific voltage requirements against the application needs before swapping these components.
The maximum collector-emitter voltage (VCEO) is 80 V.
The BC640 is complementary to the BC635, BC637, and BC639 NPN transistors.
The DC current gain (hFE) ranges from 100 to 250 when the collector current is -150 mA.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.