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The BC807-25LT3G is a PNP silicon general-purpose transistor manufactured by onsemi. It operates with a collector-emitter voltage of -45 V and a continuous collector current of -500 mA. The device features a DC current gain (hFE) ranging from 160 to 400 at IC = -100 mA, VCE = -1.0 V. It is housed in an SOT-23 package (CASE 318). The component is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
Verify the specific ordering suffix LT3G against official documentation to confirm tape and reel packaging quantities and automotive PPAP capability status. Ensure the part number matches the exact electrical characteristics required for the target application, as variations exist within the BC807 family regarding gain ranges and voltage ratings.
Select this component when a PNP transistor with moderate current handling and high gain is required in a compact surface-mount form factor. Consider the thermal resistance and power dissipation limits relative to the PCB layout. Verify that the -45 V rating meets the circuit's maximum voltage requirements.
This device belongs to the BC807 series of general-purpose PNP transistors. It shares the same physical package and basic structure as the BC807-16L and BC807-40L variants, differing primarily in the specified DC current gain ranges. The LT3G suffix indicates a specific packaging configuration provided by onsemi.
BC807-25LT1G
The DC current gain (hFE) for the BC807-25 is specified between 160 and 400 when measured at IC = -100 mA and VCE = -1.0 V.
Yes, devices with the 'S' prefix are AEC-Q101 qualified and PPAP capable. Standard versions may also be suitable depending on specific site and control change requirements.
The maximum collector-emitter voltage (VCEO) is -45 V.