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Product Detailed Parameters
- Description：TRANS PNP 45V 0.8A SOT23-3
- Series：-
- Mfr：Diotec Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
- Power - Max：310 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The Diotec Semiconductor BC807-40 is a general-purpose PNP bipolar junction transistor (BJT) designed for surface-mount applications. It is housed in an SOT-23 (TO-236) package and operates with a maximum collector current of 500 mA and a power dissipation of 300 mW. Key electrical ratings include a collector-emitter voltage of -45 V, a collector-base voltage of -50 V, and an emitter-base voltage of -5 V. The device features a DC current gain (hFE) group of 250 to 630 at 100 mA. It supports a junction temperature range from -55°C to +150°C and includes a transition frequency of 100 MHz.
Feature Summary
- General-purpose PNP transistor suitable for commercial and industrial environments
- Three distinct DC current gain groups available within the series
- Compliant with RoHS directives, REACH regulations, and conflict mineral standards
Applications
- Signal processing circuits
- Electronic switching applications
- Amplification stages
Procurement Notes
Verify the specific ordering suffix when purchasing. Standard versions are designated as commercial/industrial grade. Versions with the -Q suffix are AEC-Q101 compliant, while those with the -AQ suffix are AEC-Q101 qualified. Confirm that the required automotive qualification matches the intended application environment before finalizing procurement.
Selection Notes
Select this component for low-voltage PNP switching or amplification tasks requiring a compact SOT-23 footprint. Ensure the design accommodates the specified 300 mW power dissipation limit at the expected ambient temperature. Verify that the hFE range of 250 to 630 meets the circuit's drive requirements. Consider the -Q or -AQ variants if automotive reliability standards are mandatory for the project.
Part Context
This part belongs to the BC807 series of SMD general-purpose PNP transistors manufactured by Diotec Semiconductor. The series offers complementary NPN counterparts, such as the BC817. The BC807-40 variant specifically targets applications requiring a high current gain group compared to the lower gain options like the BC807-16 or BC807-25.
Replacement Considerations
BC807-40-Q
FAQ
What is the marking code for the BC807-40?
The standard marking code is 5C or 5CT.
How does the BC807-40 differ from the BC807-40-Q?
The BC807-40-Q is AEC-Q101 compliant, whereas the standard BC807-40 is a commercial/industrial grade component.
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (VCEO) is 45 V.
