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Product Detailed Parameters
- Description：TRANS PNP 45V 0.5A SOT-23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
- Power - Max：310 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BC807-40-7-F is a PNP small-signal transistor manufactured by Diodes Incorporated in an SOT23 package. It features a collector-emitter voltage of -45 V and a continuous collector current of -0.5 A. The device provides a DC current gain (hFE) range of 170 to 400 at IC = -100 mA, with a minimum of 60 at IC = -300 mA. Electrical characteristics include a collector-base breakdown voltage of -50 V, a gain-bandwidth product of 100 MHz, and a collector-emitter saturation voltage of -0.7 V at IC = -500 mA. Thermal resistance from junction to ambient is 403 °C/W.
Feature Summary
- Epitaxial planar die construction for reliable switching and amplification
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free "Green" device
Applications
- General-purpose switching applications
- Audio frequency (AF) amplifier stages
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantities and reel specifications. Ensure that the selected component matches the required electrical parameters and compliance standards for your design. Cross-reference datasheet revision numbers to guarantee accurate technical data alignment during procurement processes.
Selection Notes
Select this component when a PNP general-purpose transistor with moderate current handling and defined gain ranges is required. The BC807-40 variant offers a specific hFE binning suitable for consistent amplification performance. Consider the SOT23 package dimensions and thermal characteristics for PCB layout and heat dissipation requirements in compact designs.
Part Context
This part belongs to the BC807 series of PNP silicon transistors designed for small-signal applications. It serves as the complementary counterpart to the BC817 NPN transistor family. The series is engineered for use in low-power switching circuits and audio amplifier stages, providing standardized performance across various manufacturing batches.
Replacement Considerations
BC807-40Q
FAQ
What is the maximum collector-emitter voltage for the BC807-40-7-F?
The maximum collector-emitter voltage (VCEO) is -45 V.
Does the BC807-40-7-F meet environmental compliance standards?
Yes, it is totally lead-free, fully RoHS compliant, and halogen and antimony free.
What is the typical DC current gain range for this transistor?
The DC current gain (hFE) ranges from 170 to 400 at a collector current of -100 mA.
