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Product Detailed Parameters
- Description：TRANS PNP 45V 0.5A PG-SOT23-3-11
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA, 1V
- Power - Max：330 mW
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23-3-11
- Grade：-
- Qualification：-
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Overview
The BC80725E6327HTSA1 is a dual PNP silicon bipolar junction transistor (BJT) array manufactured by Infineon Technologies. It is housed in an SC-74-6 surface-mount package and features a maximum DC collector current of 500 mA. The device supports a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. Key electrical characteristics include a power dissipation of 330 mW, a transition frequency (fT) of 200 MHz, and a saturation voltage of 700 mV. The component operates within a temperature range of -65°C to +150°C and meets AEC-Q100 automotive qualification standards.
Feature Summary
- Dual PNP configuration for integrated switching applications
- Automotive-grade reliability with AEC-Q100 qualification
- High-frequency performance suitable for signal processing
Applications
- Automotive electronic control units
- General-purpose switching circuits
- Signal amplification stages
Procurement Notes
Verify the complete part number including the suffix HTSA1 when sourcing components. Confirm that the specific variant matches the required automotive qualification and packaging specifications. Ensure compatibility with existing design parameters before procurement.
Selection Notes
Select this component for designs requiring dual PNP transistors in a compact SMD footprint. Consider the 45 V rating and 500 mA current capacity for appropriate load requirements. Verify thermal management needs given the 330 mW power dissipation limit.
Part Context
This component belongs to the BC807 series of PNP silicon transistors. It is designed for general-purpose amplification and switching tasks. The series offers various configurations and packages to suit different circuit density and performance requirements.
Replacement Considerations
Check for direct substitutes within the BC807 family or equivalent dual PNP arrays from other manufacturers. Ensure pinout compatibility and matching electrical ratings for seamless integration.
