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The BC80725E6327HTSA1 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and designed for general-purpose audio frequency applications. The device supports a maximum collector current of 500 mA and features a collector-emitter voltage rating of 45 V, with a collector-base voltage of 50 V and an emitter-base voltage of 5 V. Power dissipation is rated at 330 mW, while the transition frequency reaches 200 MHz. DC current gain ranges from 160 to 400 at 100 mA and 1 V. It operates within a temperature range of -65°C to +150°C and holds AEC-Q100 qualification.
Verify component authenticity through authorized channels due to end-of-life status. Confirm package integrity and pinout alignment before integration. Ensure storage conditions prevent moisture damage. Validate supplier documentation against official Infineon specifications. Review discontinuation notices for long-term supply chain planning.
Select this component for designs requiring robust PNP switching or amplification in space-constrained layouts. The SOT-23-3 form factor enables compact PCB routing. Consider thermal management capabilities given the 330 mW dissipation limit. Verify that the 45 V voltage rating aligns with circuit requirements. Evaluate the 200 MHz bandwidth against signal frequency needs.
This part belongs to the BC807 series of PNP transistors, representing a standard solution for low-power analog and digital switching applications. The suffix indicates specific binning and packaging configurations defined by Infineon. It complements NPN counterparts like the BC817 series for complementary circuit designs.
Consult official Infineon substitution lists for verified alternatives. Generic cross-references may lack identical electrical tolerances or automotive qualification status.