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Product Detailed Parameters
- Description：TRANS NPN 45V 0.5A SOT-23
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 100mA, 1V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The BC817-16 RFG is a single NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 500 mA. The device operates within a junction temperature range of -55°C to 150°C and dissipates up to 300 mW of power. Key electrical characteristics include a transition frequency of 100 MHz, a minimum DC current gain (hFE) of 160 at 100 mA and 1 V, and a maximum collector-base cutoff current of 100 nA.
Feature Summary
- Single NPN configuration housed in an SOT-23 surface-mount package
- High DC current gain with a minimum value of 160 under specified test conditions
- Robust thermal performance supporting operation up to 150°C junction temperature
- Compliant with RoHS3 standards and free from REACH restrictions
Applications
- General-purpose signal amplification circuits
- Switching applications requiring moderate current handling
- Driver stages for low-power loads
- Audio pre-amplifier stages
Procurement Notes
Verify the manufacturer part number BC817-16 RFG against official Taiwan Semiconductor documentation to confirm specifications. Ensure the component meets required environmental standards such as RoHS3 and REACH compliance. Cross-reference datasheets for specific hFE binning and thermal resistance values relevant to the target application design.
Selection Notes
Select this component when a standard NPN BJT with 45V breakdown and 500mA current capacity is required in a compact SOT-23 footprint. The BC817-16 variant specifically offers a higher minimum current gain compared to other bins in the series, making it suitable for applications demanding consistent amplification factors without extensive sorting.
Part Context
This component belongs to the BC817 family of general-purpose NPN transistors. The '16' suffix denotes a specific DC current gain bin, distinguishing it from variants like BC817-25 or BC817-40 which have different gain ranges. The 'RFG' suffix typically indicates the tape and reel packaging format used for automated surface-mount assembly processes.
Replacement Considerations
Taiwan Semiconductor BC817-25 RFG
FAQ
What is the minimum DC current gain (hFE) for the BC817-16 RFG?
The minimum DC current gain is 160, measured at a collector current of 100 mA and a collector-emitter voltage of 1 V.
Is the BC817-16 RFG AEC-Q101 qualified?
No, the BC817-16 RFG is not listed as AEC-Q101 qualified. Automotive-grade alternatives in this family, such as those from Diodes Incorporated, may carry this certification.
What is the maximum power dissipation of this transistor?
The maximum power dissipation is 300 mW at an ambient temperature of 25°C.
