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The Diotec Semiconductor BC817-25 is a general-purpose NPN bipolar junction transistor housed in an SOT-23 (TO-236) surface-mount package. It features a maximum collector-emitter voltage of 45 V and a continuous DC collector current rating of 800 mA. The device provides a minimum DC current gain (hFE) of 160 at a collector current of 100 mA and a collector-emitter voltage of 1 V. Its transition frequency is specified at 100 MHz, with a maximum power dissipation of 310 mW. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the official Diotec Semiconductor datasheet to confirm the exact quality grade. The absence of a suffix indicates industrial grade, while the -AQ suffix denotes AEC-Q101 qualification. Confirm that the requested part matches the intended reliability standard before finalizing procurement specifications.
Select this component when a small SMD NPN transistor with high current capability is required. The BC817-25 variant specifically targets designs needing a guaranteed minimum hFE of 160. Ensure the application voltage does not exceed the 45 V collector-emitter breakdown limit and that thermal management accommodates the 310 mW power dissipation rating.
This component belongs to the BC817 series of SMD general-purpose NPN transistors manufactured by Diotec Semiconductor. The series includes variants differentiated by their DC current gain ranges (-16, -25, and -40). The BC817-25 represents the middle tier of gain performance within this family, sharing identical electrical ratings and physical packaging with its siblings.
BC817-16
The marking code for the BC817-25 is '6B' or '6CS'.
Yes, the complementary PNP transistor for the BC817 series is the BC807.
The maximum peak collector current (ICM) is rated at 1 A.