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The BC817-40LT3 is a general-purpose NPN silicon transistor manufactured by onsemi, housed in an SOT-23 (TO-236) surface-mount package. It features a collector-emitter voltage of 45 V and a continuous collector current of 500 mA. The device provides a minimum DC current gain of 250 at 100 mA with a 1.0 V collector-emitter voltage. Its transition frequency is rated at 100 MHz, and it supports junction temperatures up to 150°C.
Verify the specific ordering suffix against official documentation to confirm tape and reel specifications. Confirm that the component meets RoHS requirements if lead-free status is mandatory for the assembly process. Ensure the package dimensions align with the design footprint before finalizing procurement.
Select this component when a standard NPN transistor with a 45 V rating and 500 mA capability is required. The BC817-40 variant offers higher current gain compared to lower-rated siblings. Consider thermal dissipation limits based on the PCB substrate material and ambient temperature conditions during operation.
This part belongs to the BC817 series of general-purpose NPN transistors from onsemi. The series includes variants with different current gain ranges, such as BC817-16 and BC817-25. All share similar electrical ratings but differ in hFE classification to suit various circuit sensitivity requirements.
BC817-40LT1G
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 45 V.
The minimum DC current gain (hFE) is 250 when measured at IC = 100 mA and VCE = 1.0 V.
Yes, onsemi offers Pb-Free packages for the BC817 series, indicated by the 'G' suffix in ordering information.