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The Diotec Semiconductor BC817-40W is a single NPN general-purpose bipolar junction transistor (BJT) housed in an SOT-323 surface-mount package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 500 mA. The device offers a power dissipation capacity of 200 mW and supports a junction temperature range from -55°C to +150°C. Electrical characteristics include a DC current gain group minimum of 250 at 100 mA, a transition frequency of 100 MHz, and a collector-emitter saturation voltage of 0.7 V at 500 mA.
Verify the specific suffix against official documentation to confirm compliance status. Standard versions are commercial/industrial grade. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes qualification status. Confirm package type and marking codes match project requirements before finalizing procurement.
Select this component for designs requiring a compact SOT-323 NPN transistor with moderate current handling. Ensure the application operates within the 200 mW power dissipation limit at expected ambient temperatures. Verify that the required current gain falls within the specified Group -40 parameters. Consider complementary PNP transistors like the BC807W if push-pull configurations are needed.
This part belongs to the BC817W series of SMD universal NPN transistors manufactured by Diotec Semiconductor. The series includes variants with different voltage ratings and gain groups. The BC817-40W specifically targets general-purpose applications where space constraints favor the small SOT-323 footprint over larger packages.
BC817-40W-AQ
The maximum collector-emitter voltage (VCEO) with the base open is 45 V.
Standard BC817-40W units are commercial/industrial grade. Automotive compliance requires the specific -Q suffix (AEC-Q101 compliant) or -AQ suffix (qualification).
The datasheet recommends the BC807W or BC808W series as complementary PNP transistors.