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The BC81725MTF is an NPN epitaxial silicon transistor manufactured by ON Semiconductor. It utilizes a SOT-23 (TO-236AB) surface-mount package and features tape-and-reel packing. The device supports a collector-emitter voltage of 45 V, a collector-base voltage of 50 V, and a continuous DC collector current of 800 mA. Power dissipation is rated at 310 mW with a junction temperature limit of 150 °C. The '25' suffix indicates a DC current gain (hFE) classification range of 160 to 400 at IC = 100 mA and VCE = 1 V.
Verify the part number against the official ON Semiconductor database due to historical Fairchild integration changes where underscores were replaced with dashes. Confirm that the matte finish package designation matches your specific assembly requirements. Ensure the hFE classification aligns with your circuit design constraints before finalizing procurement orders.
Select this component when a small-form-factor NPN transistor with high current handling is required. The BC81725 variant provides a specific mid-range current gain profile compared to the -16 or -40 classifications. Verify thermal management capabilities as the device relies on PCB copper area for heat dissipation within its 310 mW power rating limits.
This component belongs to the BC817 series of general-purpose NPN transistors originally developed by Fairchild Semiconductor and now managed by ON Semiconductor. It serves as the complementary counterpart to the BC807 PNP transistor family. The series is widely utilized in consumer electronics and industrial control boards requiring reliable low-voltage switching.
The 'M' suffix denotes that the device uses a matte type package finish.
The '25' suffix classifies the DC current gain (hFE) between 160 and 400 under standard test conditions of IC = 100 mA and VCE = 1 V.
Yes, the datasheet explicitly lists AF-driver stages as a supported application for this component.