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The BC817K25E6327HTSA1 is an NPN silicon general-purpose audio frequency transistor manufactured by Infineon Technologies. It operates with a collector-emitter voltage of 45 V and supports a continuous collector current of 500 mA. The device features a DC current gain (hFE) range of 160 to 400 at 100 mA, ensuring high amplification capability. It has a transition frequency of 170 MHz and a maximum power dissipation of 500 mW in the SOT-23 package. Qualified under AEC-Q101 standards, it functions within a junction temperature range of -65 °C to +150 °C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix matches the required hFE group and packaging format. Check for end-of-life status as indicated by external sources. Ensure compliance with RoHS directives and material content sheets before integration into production designs.
Select this component when designing circuits requiring robust NPN amplification with defined gain ranges. The 160 to 400 hFE group provides consistent performance for linear applications. Consider the 500 mA current limit and 500 mW thermal dissipation constraints for heat management. The AEC-Q101 qualification makes it appropriate for automotive environments where reliability is critical.
This part belongs to the BC817K series of NPN silicon transistors designed for general-purpose use. It shares pin configurations and mechanical dimensions with other variants in the family, differing primarily in electrical characteristics like breakdown voltage and gain grouping. The K-series designation indicates specific gain binning and automotive qualification.
Direct substitutes include BC817K16E6327HTSA1 and BC817K40E6327HTSA1 from the same manufacturer, offering different gain groups but identical packages and ratings.