BC817K40E6359HTMA1

Overview

The BC817K40E6359HTMA1 is a single NPN silicon audio frequency transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 45 V and supports a continuous collector current of 500 mA. The device features a transition frequency of 170 MHz and a maximum power dissipation of 500 mW. It is housed in a PG-SOT23 surface-mount package. The component exhibits a minimum DC current gain (hFE) of 250 at 100 mA and 1 V, with a maximum collector-base cutoff current of 100 nA.

Feature Summary

• Designed for general audio frequency applications
• High collector current capability
• Low collector-emitter saturation voltage

Applications

• General audio amplification circuits
• Switching applications requiring high current gain
• Complementary pairs with BC807/W or BC808/W series

Procurement Notes

Verify the specific suffix E6359 against official Infineon documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Ensure the ordering part number matches the required hFE range and packaging format for production integration.

Selection Notes

Select this component for designs requiring a single NPN transistor with moderate power handling and high current gain in a compact SOT-23 footprint. Consider the complementary BC807K-40 for push-pull configurations. Evaluate thermal management requirements based on the 500 mW power dissipation limit in the target PCB layout.

Part Context

This part belongs to the BC817 family of NPN silicon transistors optimized for audio frequency use. It is often paired with PNP counterparts like the BC807 series. The 'K' designation typically indicates a specific hFE binning range, while the suffix denotes manufacturing and packaging details defined by Infineon.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.