BC817K40WE6327HTSA1

Overview

The BC817K40WE6327HTSA1 is an NPN silicon audio frequency transistor in a SOT-323 package. It features a collector-emitter voltage of 45 V, collector-base voltage of 50 V, and emitter-base voltage of 5 V. The maximum continuous collector current is 500 mA with a peak current of 1000 mA. Total power dissipation is 250 mW at case temperatures up to 130 °C. The transition frequency is 170 MHz. DC current gain ranges from 250 to 630 at IC = 100 mA and VCE = 1 V. Collector-emitter saturation voltage is 0.7 V max at IC = 500 mA.

Feature Summary

• Designed for general audio frequency applications
• High current gain capability
• Low collector-emitter saturation voltage

Applications

• General AF applications

Procurement Notes

Verify the component status as obsolete or end-of-life before procurement planning. Confirm that the SOT-323 package matches the design footprint. Ensure AEC-Q101 qualification requirements are met if automotive standards apply. Check RoHS compliance documentation for material content verification.

Selection Notes

Select this component when a single NPN transistor with high current gain is required in a compact surface-mount package. The SOT-323 form factor suits space-constrained designs. Verify thermal management capabilities given the 250 mW power dissipation limit. Ensure operating conditions remain within the specified junction temperature range.

Part Context

This part belongs to the BC817K series of NPN silicon transistors manufactured by Infineon Technologies. The 'W' suffix indicates the SOT-323 package variant. The '40' denotes the specific DC current gain grouping. The E6327HTSA1 suffix identifies the specific ordering and packaging configuration.

Replacement Considerations

BC817K40E6433HTMA1