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Product Detailed Parameters
- Description：TRANS NPN 25V 0.8A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：25 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
- Power - Max：310 mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
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Overview
The BC81840MTF is an NPN epitaxial silicon transistor from ON Semiconductor, packaged in a surface-mount SOT-23 (TO-236) configuration. It features a maximum collector-emitter voltage of 25 V and a continuous DC collector current rating of 800 mA. The device includes a junction temperature limit of 150 °C and a power dissipation capacity of 310 mW at 25 °C ambient temperature. The '40' suffix indicates an hFE classification range of 250 to 630 at IC = 100 mA and VCE = 1 V. The 'TF' suffix denotes tape and reel packaging.
Feature Summary
- Designed for switching and amplifier applications
- Suitable for AF-driver stages and low-power output stages
- Functions as the complement to the BC807/BC808 PNP transistor series
Applications
- Switching circuits
- Amplifier stages
- AF-driver stages
- Low power output stages
Procurement Notes
Verify the specific hFE bin by confirming the ordering suffix matches the required gain range. Ensure the package marking code corresponds to the correct voltage rating variant within the BC818 family. Confirm that the tape and reel packing method aligns with automated assembly requirements. Cross-reference the datasheet revision to ensure compliance with current manufacturing specifications.
Selection Notes
Select this component when an NPN transistor with a 25 V collector-emitter breakdown voltage is required. The high hFE classification makes it suitable for applications demanding significant current gain without excessive base drive. Consider the thermal resistance and power derating characteristics for high-temperature environments. Verify compatibility with the complementary BC808 PNP device if push-pull configurations are utilized.
Part Context
This part belongs to the BC817/BC818 family of NPN epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by ON Semiconductor following corporate integration. The family provides standardized small-signal performance across various voltage and gain classifications. The BC818 variant specifically targets lower voltage applications compared to the higher-voltage BC817 counterpart.
Replacement Considerations
BC81825MTF
FAQ
What does the '40' suffix indicate in the BC81840MTF part number?
The '40' suffix specifies the DC current gain (hFE) classification, which ranges from 250 to 630 under standard test conditions.
How is the BC81840MTF packaged?
It is supplied in a 3-lead SOT-23 (TO-236) surface-mount package using tape and reel packing.
Is this transistor compatible with the BC808 series?
Yes, the BC818 series is designed as the electrical complement to the BC807/BC808 PNP transistor series.
