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The BC846BW,115 is an NPN general-purpose transistor manufactured by Nexperia USA Inc. It utilizes a SOT323 (SC-70) surface-mounted device plastic package with three leads. The component supports a maximum collector-emitter voltage of 65 V and a continuous collector current of 100 mA. Peak pulse ratings allow for 200 mA collector and base currents. The DC current gain (hFE) ranges from 200 to 450 at a collector current of 2 mA and VCE of 5 V. Total power dissipation is rated at 200 mW, with a junction temperature limit of 150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Cross-reference the part number with the latest product data sheet revision to confirm compliance with current specifications before finalizing orders.
Select this component when a small form factor NPN transistor is required for low-power applications. The high hFE range suits amplifier designs needing substantial signal gain. Verify that the operating conditions remain within the specified thermal and electrical limits to ensure reliability in the target circuit environment.
This device belongs to the BC846xW series, which includes variants with different gain selections such as BC846W and BC846AW. All series members share the same SOT323 package and core electrical characteristics, differing primarily in their DC current gain specifications. The PNP complement for this series is the BC856BW.
BC846AW,115
The marking code is 1B%, where % represents a placeholder for the manufacturing site code.
The transition frequency is 100 MHz under conditions of VCE = 5 V, IC = 10 mA, and Tamb = 25 °C.
Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.