BC847A_R1_00001

Overview

The BC847A_R1_00001 is a general-purpose NPN bipolar junction transistor manufactured by Panjit International Inc. It utilizes silicon planar epitaxial technology and is housed in the SOT-23 surface-mount package. The device features a collector-emitter breakdown voltage of 45V and a continuous collector current rating of 100mA. It is designed for low-voltage, low-power amplification and switching applications within electronic circuits.

Feature Summary

• General-purpose NPN configuration suitable for amplification tasks
• Surface-mount construction in an SOT-23 package for automated assembly
• Silicon planar epitaxial structure ensuring stable operation

Applications

• Low-voltage amplifier circuits
• General-purpose switching applications
• Signal processing stages

Procurement Notes

Verify the specific gain binning (A) against design requirements, as this suffix denotes a tighter DC current gain range compared to standard variants. Confirm RoHS compliance status via the official datasheet before integration. Ensure the ordering quantity aligns with the manufacturer's reel packaging specifications to avoid handling discrepancies during production.

Selection Notes

Select this component when a standard NPN transistor with a 45V collector-emitter voltage rating is required. The 'A' suffix indicates a specific hFE binning; verify that this gain range meets the circuit's biasing needs. The SOT-23 package is appropriate for space-constrained designs requiring surface-mount technology compatibility.

Part Context

This part belongs to the BC847 series of small-signal NPN transistors produced by Panjit. These devices are widely used in consumer electronics and industrial equipment due to their reliability and compact form factor. The series offers various gain bins to accommodate different circuit sensitivity requirements while maintaining consistent electrical characteristics across the product line.

Replacement Considerations

BC847A_R1_000A1