BC847AQAZ

Overview

The BC847AQAZ is a single NPN general-purpose bipolar junction transistor manufactured by Nexperia USA Inc. It is housed in a DFN1110D-3 surface-mount package. The device supports a maximum DC collector current of 200 mA and features a collector-emitter breakdown voltage (Vceo) of 45 V. Additional electrical ratings include a collector-base voltage (Vcbo) of 50 V, an emitter-base voltage (Vebo) of 6 V, and a power dissipation (Pd) of 200 mW.

Feature Summary

• Single NPN configuration for discrete switching and amplification tasks
• DFN1110D-3 leadless plastic package designed for space-constrained applications
• High gain selection variant optimized for low-current signal processing

Applications

• General-purpose switching circuits
• Small-signal amplification stages
• Logic level translation interfaces

Procurement Notes

Verify the specific suffix 'QZ' against official Nexperia documentation to confirm the exact gain binning and tape-and-reel specifications. Ensure the DFN1110D-3 footprint matches your PCB layout requirements. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to final procurement.

Selection Notes

Select this component when a compact SMD NPN transistor with high current capability (200 mA) is required. The DFN1110D-3 package offers superior thermal performance compared to traditional SOT packages. Verify that the 45 V rating meets your circuit's voltage headroom needs.

Part Context

This part belongs to the Nexperia BC847 series of general-purpose transistors. While standard variants typically support 100 mA, this specific model is rated for 200 mA. It serves as a modern replacement for legacy TO-236AB packages in dense consumer electronics and industrial control boards.

Replacement Considerations

Check for direct equivalents such as the BC847AQB-QZ from Nexperia, which shares the same DFN1110D-3 package and 200 mA rating. Cross-reference gain characteristics carefully when substituting with other manufacturers' parts.