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The BC847B RFG is a single NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 100 mA. The device operates within a junction temperature range of -55°C to 150°C and dissipates up to 200 mW of power. Key electrical characteristics include a transition frequency of 100 MHz, a minimum DC current gain (hFE) of 200 at 2 mA and 5 V, and a maximum collector cutoff current of 100 nA. The saturation voltage is specified as 500 mV under standard test conditions.
Verify the manufacturer part number BC847B RFG against official Taiwan Semiconductor documentation to ensure authenticity. Confirm RoHS3 compliance and MSL level 1 status during incoming inspection. Check for physical damage on the SOT-23 leads before soldering. Ensure storage conditions maintain moisture sensitivity integrity until assembly.
Select this component when a high-gain NPN transistor with 45 V breakdown is required in a small surface-mount footprint. Compare hFE minimums against circuit bias requirements. Verify thermal dissipation limits relative to PCB copper area. Consider the 100 MHz transition frequency for bandwidth constraints in analog designs.
This device belongs to the BC847 series of general-purpose NPN transistors. It shares the same package and basic electrical structure as variants like BC847A and BC847C, differing primarily in the DC current gain binning. The RFG suffix denotes specific packaging and handling specifications defined by the manufacturer for automated assembly processes.
The minimum DC current gain is 200, measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.
The maximum power dissipation is 200 mW at an ambient temperature of 25°C.
Yes, the component is confirmed to be RoHS3 compliant according to manufacturer specifications.