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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SST3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SST3
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC847BHZGT116 is an NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a single configuration in an SOT-23-3 surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 350 mW. DC current gain (hFE) ranges from 200 to 450 at 2 mA and 5 V. Additional specifications include a transition frequency (fT) of 200 MHz, a maximum operating temperature of +150°C, and AEC-Q101 automotive qualification.
Feature Summary
- Automotive-grade reliability certified under the AEC-Q101 standard for robust performance in vehicle environments.
- High DC current gain range providing consistent amplification characteristics for signal processing applications.
- Compact SOT-23-3 surface-mount package design optimized for space-constrained printed circuit board layouts.
Applications
- Low-frequency small-signal amplification circuits
- General-purpose switching applications in automotive electronics
- Driver circuits for low-power loads
Procurement Notes
Verify the specific suffix GT116 against official ROHM documentation to confirm reel packaging and automotive grade status. Ensure compatibility with SOT-23-3 footprint requirements during procurement. Cross-reference the AEC-Q101 certification details directly with the manufacturer's datasheet to validate automotive suitability for the intended application environment.
Selection Notes
Select this component when automotive qualification is required for NPN switching or amplification tasks. The 45 V collector-emitter voltage and 100 mA current capacity define its operational limits. Compare the 200-450 hFE gain range against circuit requirements to ensure adequate signal drive. Verify that the 350 mW power dissipation rating aligns with thermal management capabilities in the target assembly.
Part Context
This part belongs to the BC847 series of general-purpose NPN transistors produced by ROHM Semiconductor. The HZG suffix indicates the automotive-grade variant compliant with AEC-Q101 standards. It serves as a complement to the BC857BHZGT116 PNP counterpart within the same product family, offering matched characteristics for complementary push-pull configurations in electronic designs.
Replacement Considerations
The BC847BU3HZGT106 offers a similar electrical profile but utilizes a smaller SOT-323 package. Standard grade alternatives like the BC847BT116 lack the required automotive certification. Verify pinout compatibility and voltage ratings before substituting with non-ROHM equivalents.
