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The BC847BWT1G is a general-purpose NPN silicon transistor designed for low-power surface mount applications. It utilizes the SC-70 (SOT-323) package and supports continuous collector currents up to 100 mA. The device features a collector-emitter breakdown voltage of 45 V, a collector-base voltage of 50 V, and an emitter-base voltage of 6.0 V. It offers a current-gain-bandwidth product of 100 MHz and operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering prefix against project requirements. Prefixes such as 'S' or 'NSV' indicate AEC-Q101 qualification and PPAP capability for automotive use. Confirm that the standard version meets non-automotive specifications if high-reliability automotive validation is not required for the application.
Select this component for compact designs requiring a single NPN transistor with moderate gain and voltage ratings. Ensure the thermal resistance of 620 °C/W on an FR-5 board aligns with the system's heat dissipation capabilities. Verify that the 100 mA continuous collector current limit satisfies the peak load demands of the target circuit.
This part belongs to the BC846/BC847/BC848 family of general-purpose transistors manufactured by onsemi. These devices are widely used across consumer and industrial electronics due to their standardized pinout and small form factor. The BC847 variant specifically provides a 45 V collector-emitter rating, distinguishing it from the higher-voltage BC846 and lower-voltage BC848 series.
Compatible substitutes include BC847BDW1T1G for dual-channel configurations and BC847BU3HZG for automotive-grade requirements.