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The BC847C-7-F is an NPN small-signal transistor manufactured by Diodes Incorporated, housed in a SOT23 plastic package. It features a collector-emitter breakdown voltage of 45 V and a continuous collector current rating of 100 mA. The device offers a high DC current gain (hFE) ranging from 420 to 800 at IC = 2.0 mA and VCE = 5 V. Electrical characteristics include a transition frequency of 100 MHz and a power dissipation capability of up to 310 mW under standard conditions.
Verify the specific ordering suffix matches the required reel size and packing quantity. Confirm that the component meets all applicable environmental directives relevant to your region. Ensure the design accommodates the specified thermal resistance values for the intended operating environment.
Select this part when a high-gain NPN transistor is required for low-power signal amplification or switching. The BC847C variant provides significantly higher current gain compared to A and B grades. Verify that the 45 V collector-emitter voltage rating exceeds the maximum circuit voltage requirements.
This component belongs to the BC846A–BC848C series of NPN small-signal transistors. It serves as the complementary counterpart to the BC857C PNP transistor within the same family. The series is widely utilized in consumer electronics and industrial control systems requiring reliable surface-mount bipolar junction transistors.
Compatible substitutes include BC847C-13-F and generic equivalents such as 2N3904 if pinout and voltage ratings align. Verify that replacement parts meet the same hFE gain band and package dimensions.
The device marking code for the BC847C-7-F is K1M.
The minimum DC current gain (hFE) is 420 when measured at IC = 2.0 mA and VCE = 5 V.
No, this specific part is not automotive-compliant. An automotive-compliant version is available under the separate datasheet for BC846AQ–BC848CQ.