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The BC847CT116 is an NPN silicon small-signal bipolar junction transistor manufactured by ROHM Semiconductor. It is housed in a surface-mount SOT-23-3 package and designed for general-purpose amplification and switching applications. The device features a collector-emitter voltage of 45V, a continuous collector current of 100mA, and a power dissipation rating of 350mW. It offers a high DC current gain (hFE) ranging from 420 to 800 at 2mA and 5V, with a transition frequency of 200MHz. The component is qualified under AEC-Q101 standards for automotive reliability.
Verify the specific suffix 'T116' against official ROHM documentation to confirm tape-and-reel packaging specifications. Ensure the selected variant matches the required hFE binning (C range) for your circuit design. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing procurement.
Select this component when a high-gain NPN transistor is required in a compact SOT-23 package. The C-range gain specification makes it ideal for low-current amplification tasks where higher sensitivity is needed compared to standard B or A grade transistors. Consider the 45V VCEO limit for voltage headroom requirements.
This part belongs to the BC847 series of NPN small-signal transistors. It serves as the high-gain variant within the family, complementing lower gain options like BC847A and BC847B. The series is widely used in consumer electronics and industrial control boards due to its balance of performance and small form factor.
BC847C is the base part number equivalent. BC847CHZG is a similar ROHM variant without the T116 reel suffix. Cross-reference with other manufacturers' BC847C equivalents if supply constraints exist, ensuring pinout and electrical limits match.