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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SOT-23
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23
- Grade：-
- Qualification：-
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Overview
The BC848B is a general-purpose NPN silicon bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It operates with a maximum collector-emitter voltage of 30V and a continuous collector current of 100mA. The device features a DC current gain (hFE) ranging from 200 to 450 at 2mA and 5V. It is housed in an SOT-23 surface-mount package, suitable for low-power amplification and switching applications.
Feature Summary
- NPN silicon construction for general-purpose signal processing
- High DC current gain range for efficient amplification
- Compact SOT-23 surface-mount packaging
Applications
- General-purpose amplification circuits
- Low-power switching applications
- Signal conditioning stages
Procurement Notes
Verify the specific manufacturer designation on the component marking or datasheet, as the BC848B part number is widely used across multiple semiconductor vendors. Confirm that the received unit matches the Taiwan Semiconductor Corporation specification sheet regarding electrical limits and thermal characteristics before integration into final designs.
Selection Notes
Select this component when a standard NPN transistor with moderate gain and 30V breakdown is required. Ensure the application current remains within the 100mA limit and that the SOT-23 package dimensions fit the PCB layout constraints. Verify thermal dissipation requirements against the device's power rating.
Part Context
This component belongs to the BC848 series of small-signal NPN transistors. It serves as a complementary counterpart to the PNP BC858B device. The series is commonly utilized in consumer electronics and industrial control boards where space-efficient surface-mount solutions are necessary for basic logic and analog functions.
Replacement Considerations
- BC848B_R2_10001
- BC848B-AU_R2_000A1
FAQ
What is the typical DC current gain range for this transistor?
The DC current gain (hFE) typically ranges from 200 to 450 when measured at a collector current of 2mA and a collector-emitter voltage of 5V.
Is this device suitable for high-frequency RF applications?
No, it is designed for general-purpose amplification and switching. High-frequency RF applications typically require devices with higher transition frequencies (fT) than those specified for this general-purpose BJT.
