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The BC848BT116 is an NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It utilizes a surface-mount SOT-23-3 package and supports a maximum collector current of 100 mA with a power dissipation rating of 350 mW. The device features a collector-emitter breakdown voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 5 V. Its DC current gain (hFE) ranges from 200 to 450 at a test condition of 2 mA and 5 V. The transition frequency (fT) is specified at 200 MHz, and the component is qualified under AEC-Q101 standards for automotive applications.
Verify the specific suffix 'T116' against official ROHM documentation to confirm reel specifications and tape-and-reel dimensions. Ensure that the AEC-Q101 qualification status aligns with your system's automotive requirements. Cross-reference the datasheet revision date to validate parameter consistency before finalizing procurement orders.
Select this component when a high-gain NPN transistor is required for low-power switching or amplification within a compact footprint. The AEC-Q101 qualification makes it suitable for automotive environments where standard commercial grade parts may not suffice. Compare its 30 V rating against circuit voltage peaks to ensure adequate margin during operation.
This part belongs to the BC848 series of general-purpose NPN transistors produced by ROHM Semiconductor. The 'B' designation indicates the specific hFE binning range of 200 to 450. The 'T116' suffix typically denotes the specific taping and reeling configuration used for automated surface-mount assembly processes.
Publicly confirmed substitute part numbers are not available in the provided source material.