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The BC848BWE6327BTSA1 is an NPN silicon small signal bipolar junction transistor manufactured by Infineon Technologies. It operates with a maximum collector current of 0.1 A and a collector-emitter breakdown voltage of 30 V. The device features a minimum DC current gain (hFE) of 200 and is housed in a SOT-323 surface-mount package. It complies with RoHS standards and supports operating temperatures up to 150 °C.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure the component matches the required hFE binning and thermal characteristics for the target application environment before finalizing procurement orders.
Select this component for designs requiring a compact NPN transistor with moderate current handling capabilities. The SOT-323 package offers a smaller footprint compared to standard SOT-23 variants, making it suitable for dense PCB layouts where space optimization is critical alongside reliable switching performance.
This part belongs to the BC848 series of small signal transistors from Infineon. The series provides complementary PNP options, such as the BC858, allowing for matched pairs in differential amplifier configurations. The WE6327 suffix typically denotes specific packaging and compliance attributes defined by the manufacturer.
Direct substitutes include other BC848B variants from different manufacturers that meet the same electrical specifications and pinout configuration. Verify compatibility regarding thermal resistance and current gain ranges when cross-referencing with alternative sources.