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BC848BWH6327XTSA1 is an NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a SOT-323 surface-mount package and designed for general-purpose amplification and switching applications. The device features a maximum collector current of 100 mA and a collector-emitter voltage rating of 30 V. It operates within a temperature range of -55 °C to +150 °C and complies with RoHS standards.
Verify the specific suffix against official Infineon documentation to confirm tape-and-reel packaging and automotive qualification status. Ensure compatibility with standard SMT assembly processes for the SOT-323 form factor. Cross-reference datasheet revisions to confirm material compliance and pinout consistency before integration into production designs.
Select this component for designs requiring compact NPN switching or amplification with moderate current handling capabilities. The SOT-323 package offers a balance between thermal performance and board space efficiency. Consider the 30 V breakdown voltage and 100 mA continuous current limits when defining circuit parameters to ensure operation within safe operating areas.
This part belongs to the BC848 series of small-signal transistors, widely utilized in electronic equipment for basic logic functions and analog signal processing. The H6327 suffix typically denotes specific packaging and quality attributes defined by Infineon for automated manufacturing and supply chain traceability.
Consult official Infineon substitution guides for verified equivalents. Generic replacements may differ in hFE binning or thermal characteristics; verify electrical parameters against the original datasheet specifications.