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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SST3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：350 mW
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SST3
- Grade：-
- Qualification：-
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Overview
The BC848CT116 is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It utilizes an SOT-23-3 surface-mount package and supports a maximum collector current of 100 mA with a collector-emitter voltage rating of 45 V. The device features a DC current gain (hFE) range of 420 to 800 at 2 mA and 5 V, ensuring high amplification capability. Key electrical limits include a collector-base voltage of 50 V, an emitter-base voltage of 5 V, and a saturation voltage of 600 mV. Power dissipation is rated at 200 mW, with a transition frequency of 150 MHz and a maximum operating temperature of +150°C.
Feature Summary
- High DC current gain classification for precision signal amplification
- Automotive-grade reliability qualification under AEC-Q101 standards
- Compact SOT-23 surface-mount footprint for space-constrained designs
Applications
- General-purpose small-signal amplification in consumer electronics
- Switching applications within automotive electronic control units
- Low-power analog circuit stages requiring high beta consistency
Procurement Notes
Verify the specific suffix 'T116' corresponds to the required tape-and-reel packaging configuration during sourcing. Confirm that the AEC-Q101 qualification status meets the target application's environmental stress requirements. Ensure the component source matches ROHM Semiconductor to guarantee parameter accuracy and supply chain integrity.
Selection Notes
Select this component when a high-gain NPN transistor is required for low-current switching or linear amplification. The 45 V collector-emitter rating provides headroom above standard 30 V variants. The specified hFE range suits circuits demanding predictable gain without extensive binning. Verify thermal management capabilities align with the 200 mW power dissipation limit in the final enclosure design.
Part Context
This part belongs to the BC848 series of general-purpose NPN transistors produced by ROHM Semiconductor. The 'C' designation indicates the specific DC current gain binning, distinguishing it from lower gain variants like the BC848B. The T116 suffix denotes the reel packaging format used for automated surface-mount assembly processes.
Replacement Considerations
- BC848CT116
- BC848CTG
FAQ
Is the BC848CT116 qualified for automotive applications?
Yes, the component holds AEC-Q101 qualification, making it suitable for automotive electronic systems.
What is the maximum collector-emitter voltage for this transistor?
The maximum collector-emitter voltage (VCEO) is rated at 45 V.
Does this part use a through-hole or surface-mount package?
It utilizes an SOT-23-3 surface-mount package designed for SMD/SMT installation.
