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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SOT-323
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
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Overview
The BC849CW RFG is a single NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector-emitter voltage of 30 V and a continuous collector current rating of 100 mA. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 200 mW of power. Key electrical characteristics include a transition frequency of 100 MHz, a DC current gain (hFE) minimum of 200 at 2 mA and 5 V, and a collector-emitter saturation voltage of 600 mV at 5 mA base and 100 mA collector currents. It is housed in an SOT-323 surface-mount package.
Feature Summary
- Single NPN configuration designed for general-purpose switching and amplification applications
- High thermal stability with a wide operating junction temperature range extending to 150°C
- Low saturation voltage characteristic suitable for efficient signal processing
- RoHS compliant construction ensuring environmental safety standards
Applications
- General-purpose signal amplification circuits
- Electronic switching applications requiring low power consumption
- Consumer electronics internal logic interfacing
- Industrial control board signal conditioning
Procurement Notes
Verify the specific suffix 'RFG' against the manufacturer's official datasheet to confirm packaging details and marking codes. Ensure compatibility with SOT-323 footprints during PCB layout. Confirm RoHS3 compliance status directly with the supplier documentation prior to final procurement decisions.
Selection Notes
Select this component when a compact NPN transistor with 30 V breakdown and 100 mA current capability is required. The SOT-323 package offers space efficiency for dense layouts. Consider the 100 MHz transition frequency for moderate-speed switching tasks. Verify that the 200 mW power dissipation limit aligns with the thermal design of the target application environment.
Part Context
This part belongs to the BC849 series of small-signal transistors produced by Taiwan Semiconductor. The series includes variants with different voltage ratings and gain bands. The BC849CW specifically denotes the 30 V NPN variant. The RFG suffix indicates specific manufacturing or packaging attributes defined by the original equipment manufacturer.
Replacement Considerations
- BC849BW RFG
- BC849AW
FAQ
What is the maximum collector-emitter voltage for the BC849CW RFG?
The maximum collector-emitter voltage (VCEO) is 30 V.
Does the BC849CW RFG meet RoHS standards?
Yes, the component is RoHS3 compliant according to manufacturer specifications.
What is the minimum DC current gain specified for this transistor?
The minimum DC current gain (hFE) is 200, measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.
