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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A PG-SOT323-3
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：250 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：PG-SOT323-3
- Grade：-
- Qualification：-
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Overview
The BC849CWE6327 is a single NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in an SOT-363-6 surface-mount package designed for automated assembly. The device supports a maximum DC collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 30 V, with a collector-base voltage (VCBO) of 30 V. The emitter-base voltage (VEBO) is rated at 6 V. Power dissipation capability is 330 mW, and the transition frequency (fT) reaches 250 MHz. Operating temperatures range from -65 °C to +150 °C.
Feature Summary
- High DC current gain ranging from 420 to 800 for sensitive signal amplification
- Low saturation voltage of 200 mV for efficient switching performance
- Compact SOT-363-6 surface-mount package suitable for space-constrained designs
Applications
- General-purpose signal amplification in consumer electronics
- Switching applications requiring low saturation voltage
- Audio pre-amplifier stages
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status via the specific datasheet revision. Check manufacturing lifecycle status as availability may vary. Ensure storage conditions meet moisture sensitivity level requirements before soldering.
Selection Notes
Select this component when high current gain is required for low-level signal processing. The SOT-363-6 package offers a compact footprint compared to standard SOT-23 variants while maintaining similar electrical characteristics. Consider thermal management constraints due to the 330 mW power dissipation rating in dense PCB layouts.
Part Context
This part belongs to the BC849 series of NPN transistors, which are optimized for high-gain applications. It shares the same electrical specifications as the BC849C but utilizes the E6327 ordering suffix indicating specific tape-and-reel packaging configurations defined by Infineon for automated surface-mount production lines.
Replacement Considerations
- BC849CW H6327
FAQ
What is the maximum DC current gain (hFE) for the BC849CWE6327?
The minimum DC current gain is 420, and the maximum is 800.
Is the BC849CWE6327 available in a through-hole package?
No, it is exclusively available in the SOT-363-6 surface-mount package.
What is the collector-emitter saturation voltage?
The collector-emitter saturation voltage is typically 200 mV.
