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The BC850C,215 is an NPN general purpose transistor manufactured by Nexperia in a SOT-23 surface-mounted device plastic package. It supports a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. The device features a DC current gain (hFE) ranging from 420 to 800 at IC = 2 mA and VCE = 5 V. Total power dissipation is rated at 250 mW with a junction temperature limit of 150 °C. Transition frequency reaches 100 MHz.
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Select this component for low-power NPN switching or linear amplification tasks requiring high current gain. Ensure the application operates within the 45 V collector-emitter voltage limit and 100 mA collector current constraints. Consider the SOT-23 package dimensions for PCB layout compatibility and verify thermal management requirements against the 250 mW power dissipation rating.
This part belongs to the BC850 series of NPN transistors. The PNP complement is the BC860C. The product data sheet indicates non-automotive qualification status as of October 2024. It is designed for general electronic applications rather than specialized automotive environments.
The BC860C is the documented PNP complement. Cross-manufacturer equivalents may exist but require verification of pinout, voltage ratings, and gain characteristics against the official datasheet specifications.
The marking code is '2G' followed by a placeholder character representing the manufacturing site code.
No, the product data sheet specifies that this product is not automotive qualified unless explicitly stated otherwise.
The noise figure is typically 4 dB when measured at VCE = 5 V, IC = 200 µA, RS = 2 kΩ, B = 200 Hz, and f = 10 Hz to 15.7 kHz.